Volume 12 Issue 5 - January 22, 2010 PDF
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Articles Digest

Research Express@NCKU Jan. 22 ~ Jan. 28, 2010

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Dielectric and magnetic properties of low-temperature-fired ferrite-dielectric composites
Hsing-I Hsiang

Abstract
The composition effects on the sintering behavior, microstructure evolution, dielectric and magnetic properties of BaO‧(Nd0.8Bi0.2)2O3‧4TiO2 (BNBT) + Bi2O3-B2O3 -SiO2-ZnO (BBSZ) glass-NiCuZn ferrite composites were investigated in developing low-temperature-fired composites for high frequency EMI devices. X-ray diffractometer (XRD), scanning electron microscopy (SEM), …

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A Principled Eclectic Approach to EFL Writing Instruction
Hui-Tzu Min

For years non-native EFL writing instructors have turned to scholars and researchers in English-speaking countries such as the United States, British, and Australia for appropriate approaches to teaching writing. Yet from language-based, product-based, to process-based, and genre-based approaches, mainstream writing approaches appear to address only part of the issues faced by EFL writers. …

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Regulation of CD151 by hypoxia controls cell adhesion and metastasis in colorectal cancer
Shaw-Jenq Tsai

Metastasis is an important process that increases cancer malignancy and decreases therapeutic outcome. It involves multiple steps of cellular events including detachment from matrix and neighboring epithelial cells, migration through the surrounding stroma, entry into the circulatory system, and finally arrest, extravasation, and growth at a secondary site. Most studies in cancer metastasis primarily focused on …

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GaN-Based Solar Cells With GaN/InGaN Superlattice Absorption Layers
Jinn-Kong Sheu

Group III-nitride semiconductors have been extensively applied for light-emitting diodes (LEDs), laser diodes, photodetectors, and heterojunction transistors. InGaN alloys also provide a potential to convert solar energy in continuous band gaps. Since 2002, it has been predicted that a full-solar-spectrum material system could be achieved by the confirmation of InN with its energy band gap around 0.7 eV. With the combination of InxGa1−xN alloy systems, …

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